This research topic seeks to exploit unique properties of emerging semiconductor materials and their heterostructures for next generation electronic devices for high efficiency power and RF applications.  Current emphasis is on the investigation of transition metal nitride materials and heterostructures with their metal alloys with respect to electronic transport properties for III-N HEMT applications.  Research opportunities exist in epitaxial growth, characterization, theory, computation, device structure design and processing.  Resultant device structures will be assessed for high power and high speed performance potential. 

Hardy M. T, et al, Appl. Phys. Lett 110, 162104 (2017)

Saha B et al, Appl. Phys. Lett 110, 252104 (2017)

Deng R. et al, J. Appl. Phys 118, 015706 (2015)

key words

Semiconductors; Electronic transport; Electronic properties; Hall-effect; Heterostructures; High electron mobility transistors; RF electronics

Citizenship:  Open to U.S. citizens

Level:  Open to Postdoctoral and Senior applicants

Additional Benefits

Relocation

Awardees who reside more than 50 miles from their host laboratory and remain on tenure for at least six months are eligible for paid relocation to within the vicinity of their host laboratory.

Health insurance

A group health insurance program is available to awardees and their qualifying dependents in the United States.