This research involves computational electromagnetics coupled to nonlinear charge transport for advanced electronic and opto-electronic device simulation. It primarily focuses on the Delaunay/Voronoi surface integration (DVSI) field discretization technique and the Fermi kinetics transport (FKT) model. While these techniques have proved promising for accurate high frequency GaAs MESFET and GaN HEMT simulations, additional basic research is required on different aspects of the DVSI/FKT methodology. For example, electronic band structure and scattering mechanisms for a wider variety of technologically important materials must be computed and incorporated in the simulation. Alternative numerical methods must be investigated, with an emphasis on parallel computing techiques, to improve computational performance and enable larger problem sizes. Also, the physical models of field dynamics, semi-classical and quantum charge transport, as well as thermal processes must be further generalized to further extend device simulation capabilities.

key words

Full wave electromagnetics; Charge transport; Fermi kinetics; Charge thermodynamics; Semiconductor devices; Quantum well laser; High frequency; Hot electrons; Computational physics; Electronic band structure; Electron scattering

Citizenship:  Open to U.S. citizens

Level:  Open to Postdoctoral and Senior applicants