||Wright-Patterson AFB, OH 454337542
Remote sensing and quantum photonics require sensitive photodetectors. The ultimate limit for these sensors is single photon detection, preferably at high operating temperatures, high bandwidth, and high dynamic range. We are pursuing next generation avalanche photodiode (APD) research for focal plane arrays that can meet these goals at wavelengths beyond standard silicon and InGaAs/InP cut-off wavelengths. Of particular interest are material systems that can provide either low noise linear mode or Geiger mode operation in large array formats beyond 2 microns. We are currently exploring multiple architectures in the GaSb and InAs material systems, as well as novel readout integrated circuit designs that would facilitate large array formats.
Interest areas include device design, device simulation, device fabrication, material characterization, and device testing. We maintain numerous software licenses to facilitate this work (e.g. Sentaurus, NRL MultiBands, Lumerical, Cadence) as well as state-of-the-art fabrication and characterization facilities.
 Craig, A.P., et al., Excess noise in GaAs and AlGaAs avalanche photodiodes with GaSb absorption regions—composite structures grown using interfacial misfit arrays. Applied Physics Letters, 2014. 104(21): p. 213502-4.
 Yuan, Y., et al., AlInAsSb Impact Ionization Coefficients. IEEE Photonics Technology Letters, 2019. 31(4): p. 315-318.
Focal plane array; infrared detector; photodetector; molecular beam epitaxy; single photon detector; readout integrated circuit; avalanche photodiode; MBE; ROIC; APD