Novel semiconductors are developed and studied for their unique optical and electrical properties. These properties can be exploited to readout the excited state dynamics of excitons or color centers, which facilitates sensing applications. To readout excited state properties in devices, we must build understanding and control of the device physics governing charge generation and transport alongside phonon interactions, exciton dynamics, or sub-bandgap state control. Material interfaces in electrical devices can offer hindrances or opportunities in device design, as large electrical resistances and trap sites can result in lower performance and mask desired properties, while energetic levels can be created or suppressed at a carefully designed interfaces. This opportunity will explore the physics of unique electrical and photo-active properties through fabrication and electrical testing of devices based on novel semiconductors in direct relationship to final device performance. Materials of interest include, but are not limited to, diamond and wide band gap semiconductors with controllable sub-bandgap states, organic semiconductors, polymers, 2D materials, and metal-organic interfaces. Electrical test structures include transistors, heterojunction devices (light emitting diodes, photovoltaics), or other novel devices. Collaborations on materials measurements take advantage of in-house capabilities in optical spectroscopy, magnetic resonance, etc. Advanced electrical characterization techniques, including low temperature current-voltage, impedance and CV, magneto-photocurrent and electroluminescence, are used to measure carefully crafted (opto-)electronic devices specifically designed and fabricated in-lab to elucidate the mechanisms driving performance.