This research focuses on the surface chemistry of diamonds and other wide bandgap materials (e.g., SiC, AIN, BN, GaN), and post-growth modification of these surfaces for device applications. Specific interests include (1) chemical modification of surfaces in ultrahigh vacuum (UHV) to determine the structure and chemistry of low-index surfaces; (2) the effects of surface chemisorption and processing-based manipulation on electronic properties such as electron affinity and electrical conductivity, for vacuum microelectronics and other applications; (3) the role of surface structure and chemistry in the nucleation and growth of doped epitaxial films; and (4) the surface reaction mechanisms and kinetics of novel precursors for chemical vapor deposition and doping.

Extensive surface science facilities include three UHV systems equipped with a variety of surface analysis tools, including a load-locked UHV analysis and chemical vapor deposition processing system with gas dosing and temperature control. In situ analysis includes high-resolution electron energy loss spectroscopy; Auger electron, ultraviolet photoelectron, and x-ray photoelectron spectroscopies; low-energy electron diffraction; work function measurement using Kelvin probe; collinear four-point probe; infrared reflection absorption spectroscopy; attenuated total internal reflection; and multi-mass temperature programmed desorption.

Additional Benefits

Awardees who reside more than 50 miles from their host laboratory and remain on tenure for at least six months are eligible for paid relocation to within the vicinity of their host laboratory.

A group health insurance program is available to awardees and their qualifying dependents in the United States.