Using transmission electron microscopy (TEM), our objective is to structurally characterize electronic materials and the associated extended defects such as dislocations and stacking faults. Structures of particular interest include 4H-SiC, GaN/Ga_1-x-yAl_xIn_yAlN, and Si/Si_1-xGe_x thin films. Nanoelectric materials (e.g., consisting of gold nanoclusters formed by DNA-mediated self-assembly) are also being studied. We are also analyzing silicon oxide layers in silicon, or grown directly on Si substrate. In addition, our research group is in charge of a Hitachi H-9000UHR high-resolution TEM (a top entry instrument with 0.19 nm resolution). Other accessible TEM instruments include a Philips CM30 equipped with thin-window-, energy-dispersive x-ray spectroscopy (EDXS), and a JEOL 2010 with a field emission source; Z-contrast scanning transmission electron microscopy imaging; EDXS; and electron energy loss spectroscopy analytical capabilities.

 

key words

Compound semiconductors; Dislocations; Electronic properties; Extended defects; Gallium nitride; Nanoelectronics; Silicon carbide; Silicon-based materials; Stacking faults; Transmission electron microscopy; X-ray spectra;

Citizenship:  Open to U.S. citizens and permanent residents

Level:  Open to Postdoctoral applicants

Additional Benefits

Relocation

Awardees who reside more than 50 miles from their host laboratory and remain on tenure for at least six months are eligible for paid relocation to within the vicinity of their host laboratory.

Health insurance

A group health insurance program is available to awardees and their qualifying dependents in the United States.