RAP opportunity at Naval Research Laboratory NRL
Epitaxial Growth and Characterization of Metal Oxide and Nitride Thin Films
Location
Naval Research Laboratory, DC, Electronics Science & Technology Division
| opportunity |
location |
|
| 64.15.25.B8530 |
Washington, DC 203755321 |
Advisers
| name |
email |
phone |
|
| Neeraj Nepal |
neeraj.nepal.civ@us.navy.mil |
202.404.4621 |
Description
Wide and ultra-wide band gap semiconductors such as group III-nitrides and -oxides are of research interest for next generation RF and compact power systems. This project focuses on epitaxial growth and characterization of group-III and transition metal nitrides, oxides, complex oxides, and oxide/nitride heterojunctions for high power and frequency device application. Epitaxial thin films and heterostructures will be grown by molecular beam epitaxy and/or atomic layer deposition/epitaxy and characterized by various structural, morphological, electrical, and optical characterization techniques.
References
Nepal N, et al: Applied Physics Express 9: 021003, 2016
Nepal N, et al: Thin Solid Films 589: 47, 2015
Nepal N, et al: Crystal Growth and Design 13: 1485, 2013
key words
Epitaxial thin films; MBE growth; III-nitrides; Metal oxides; Complex oxides; ALD/E; High frequency materials; Growth and characterization;
Eligibility
Citizenship:
Open to U.S. citizens and permanent residents
Level:
Open to Postdoctoral applicants
Stipend
| Base Stipend |
Travel Allotment |
Supplementation |
|
| $99,200.00 |
$3,000.00 |
|
|
Additional Benefits
Relocation
Awardees who reside more than 50 miles from their host laboratory and remain on tenure for at least six months are eligible for paid relocation to within the vicinity of their host laboratory.
Health insurance
A group health insurance program is available to awardees and their qualifying dependents in the United States.