RAP opportunity at Naval Research Laboratory NRL
Ultra-wide bandgap semiconductor devices and materials
Location
Naval Research Laboratory, DC, Electronics Science & Technology Division
| opportunity |
location |
|
| 64.15.25.C0106 |
Washington, DC 203755321 |
Advisers
| name |
email |
phone |
|
| Marko Jak Tadjer |
marko.tadjer@nrl.navy.mil |
202 767 0655 |
Description
Ultra-wide power electronics is an emerging field based on advances in the growth of ultra-wide bandgap (> 4.5 eV) semiconductors. This opportunity involves the characterization of such materials and the fabrication and characterization of electronic devices (diodes, transistors, etc.) based on or integrating such materials. Fundamental understanding of material properties such as doping, defects, and conductivity is needed. Advanced characterization techniques are available and tailoring them for use with ultra-wide bandgap semiconductors is a part of this project.
key words
Gallium Oxide; Ga2O3; III-Oxide; III-Nitride; Diamond; High Voltage; High Power; Ultra-Wide Bandgap; Power Electronics;
Eligibility
Citizenship:
Open to U.S. citizens and permanent residents
Level:
Open to Postdoctoral applicants
Stipend
| Base Stipend |
Travel Allotment |
Supplementation |
|
| $99,200.00 |
$3,000.00 |
|
|
Additional Benefits
Relocation
Awardees who reside more than 50 miles from their host laboratory and remain on tenure for at least six months are eligible for paid relocation to within the vicinity of their host laboratory.
Health insurance
A group health insurance program is available to awardees and their qualifying dependents in the United States.