Current research focuses on the study of point defects; unintentional and intentional doping; and extended defects in bulk, and homo- and hetero-epitaxial layers of wide bandgap semiconductors. We are particularly interested in semiconductors such as GaN, AIN, AlxGal-xN, SiC (3C, 4H, 6H) ZnO, ZnSe, ZnS, BN, and diamond. We use a combination of defect sensitive techniques to detect and identify defects, and to develop a fundamental understanding of their role on the structural, optical, and electronic properties of the materials. Raman scattering, photoluminescence (PL), time-resolved PL, PL-excitation, ultraviolet-visible-infrared absorption, cathodoluminescence (CL), electro-luminescence, photo-induced current, PL-imaging, CL-imaging, scanning electron microscopy, secondary electron imaging, are employed in these investigations. Variable temperature dewars for macroscopic and microscopic optical studies are available. A large selection of single crystal bulk and films as well as devices structures are also available.

 

key words

Cathodoluninescence; absorption; Photoluminescence (PL); PL Excitation; Pulsed Luminescence excitation; Raman scattering; Luminescence imaging

Citizenship:  Open to U.S. citizens and permanent residents

Level:  Open to Postdoctoral applicants

Additional Benefits

Relocation

Awardees who reside more than 50 miles from their host laboratory and remain on tenure for at least six months are eligible for paid relocation to within the vicinity of their host laboratory.

Health insurance

A group health insurance program is available to awardees and their qualifying dependents in the United States.