Current research focuses on the study of point defects; unintentional and intentional doping; and extended defects in bulk, and homo- and hetero-epitaxial layers of wide bandgap semiconductors. We are particularly interested in semiconductors such as GaN, AIN, AlxGal-xN, SiC (3C, 4H, 6H) ZnO, ZnSe, ZnS, BN, and diamond. We use a combination of defect sensitive techniques to detect and identify defects, and to develop a fundamental understanding of their role on the structural, optical, and electronic properties of the materials. Raman scattering, photoluminescence (PL), time-resolved PL, PL-excitation, ultraviolet-visible-infrared absorption, cathodoluminescence (CL), electro-luminescence, photo-induced current, PL-imaging, CL-imaging, scanning electron microscopy, secondary electron imaging, are employed in these investigations. Variable temperature dewars for macroscopic and microscopic optical studies are available. A large selection of single crystal bulk and films as well as devices structures are also available.

 

Keywords:

Cathodoluninescence; absorption; Photoluminescence (PL); PL Excitation; Pulsed Luminescence excitation; Raman scattering; Luminescence imaging

Citizenship:  Open to U.S. citizens and permanent residents

Level:  Open to Postdoctoral applicants