Silicon-based transistors are rapidly approaching fundamental performance limits; therefore, next-generation computing and power switching needs require advanced high-performance devices based on novel electronic materials. To meet these requirements, graphene has been proposed for digital logic and wide-bandgap materials such as GaN, SiC, and Diamond have been proposed for power switching devices. This research opportunity will (1) study the fundamental switching mechanisms in graphene-based transistors, (2) develop high voltage III-N and Diamond power devices, and (3) investigate novel devices resulting from the integration of these materials, including graphene and diamond/lll-N heterojunctions.

 

References

Tadjer MJ, et al: IEEE Electron Device Letters 33: 23, 2012

Tadjer MJ, et al: Applied Physics Letters 193506: 2012

 

Keywords:

Graphene; Surface chemistry; Semiconductors; Electrochemistry; Ionic electronics;

Citizenship:  Open to U.S. citizens and permanent residents

Level:  Open to Postdoctoral applicants