This research project focuses on developing novel fabrication methods in order to create next generation photodetector and solar cell materials and devices. The applicant should be able to develop and implement fabrication procedures for various compound semiconductor optoelectronic device and test structures. Challenges and opportunities include (1) selective and non-selective wet and dry etch processes for new optoelectronic device materials and structures; (2) understanding nature and role of surface defects in promoting leakage current and development of surface treatments and fabrication techniques to mitigate their effect; (3) implementation of photonic and plasmonic structures to enhance or modify optical coupling; (4) substrate removal and/or epitaxial lift-off; (5) fabrication of small pitch (3-20 microns), deep etched (4-15 microns) pixels for large format focal plane arrays; (7) incorporation of MEMS techniques in III-V semiconductor optoelectronics; (8) innovative device architectures and geometries to improve dark current and quantum efficiency; and (9) improvement of process control to lower costs and enhance manufacturability. Available facilities include the Institute for Nanoscience (http://www.nrl.navy.mil/nanoscience/about.php/), which contains a class 100 cleanroom facility with state-of-the-art tools for fabrication and characterization of compound semiconductor materials and devices.

 

key words

Nanofabrication; Compound semiconductor; Photovoltaics; Type-II superlattices; Infrared photodetectors; Plasmonics; MEMS; Semiconductor surfaces; Nanotechnology;

Citizenship:  Open to U.S. citizens and permanent residents

Level:  Open to Postdoctoral applicants