For the next generation of power electronics, wide and ultra-wide bandgap semiconductors are an emerging field of interest. This opportunity involves (1) the growth of ultra-wide bandgap III-nitride semiconductors and (2) integration of ultra-wide bandgap semiconductors, such as AlN and diamond, with GaN. This program will be heavily based on fundamental studies relating the influence of growth on doping, interfaces, and defects. The main growth technique will be metal organic chemical vapor deposition (MOCVD), but will also be supported by pulsed growth processes as well as tailored advanced characterization techniques.

Additional Benefits

Awardees who reside more than 50 miles from their host laboratory and remain on tenure for at least six months are eligible for paid relocation to within the vicinity of their host laboratory.

A group health insurance program is available to awardees and their qualifying dependents in the United States.