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RAP opportunity at Naval Research Laboratory     NRL

Wide and Ultra-Wide Bandgap Semiconductor Growth, Integration, and Characterization


Naval Research Laboratory, DC, Electronics Science & Technology Division

opportunity location
64.15.25.C0793 Washington, DC 203755321


name email phone
Jennifer Kristine Hite 202.404.8712
Michael Mastro 202.404.4235


For the next generation of power electronics, wide and ultra-wide bandgap semiconductors are an emerging field of interest. This opportunity involves (1) the growth of ultra-wide bandgap III-nitride semiconductors and (2) integration of ultra-wide bandgap semiconductors, such as AlN and diamond, with GaN. This program will be heavily based on fundamental studies relating the influence of growth on doping, interfaces, and defects. The main growth technique will be metal organic chemical vapor deposition (MOCVD), but will also be supported by pulsed growth processes as well as tailored advanced characterization techniques.

key words
Semiconductors, GaN, AlN, Diamond, Ga2O3, growth, epitaxy, MOCVD, interfaces


Citizenship:  Open to U.S. citizens and permanent residents
Level:  Open to Postdoctoral applicants


Base Stipend Travel Allotment Supplementation
$94,199.00 $3,000.00
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