This research focuses on the modification of III-V semiconductors through the use of highly doping, epitaxial (such as rare earth monopnictides) or buried patterned metal or dielectric structures , topological insulators and quantum structures obtained during the molecular beam epitaxial growth on normal and nano-patterned surfaces to form tunable hyperbolic metamaterials, metasurfaces and next generation quantum structures. We employ the use of epitaxial metals  and specific growth schemes to bury metallic or dielectric  layers with minimal damage in subsequent epitaxial. The goal of this research is to determine the extent to which these buried structures can be used to modify the properties of III-V materials as in the formation of hyperbolic metamaterials, plasmonic enhancement, as well as, tunnel junctions and other effects. In this work, we employ both in situ sensors (such as spectroscopic ellipsometry, desorption mass spectrometry, reflection high energy diffraction, band edge thermometry) and ex situ characterization (such as AFM, STM, x-ray reflectivity, x-ray diffraction, photoluminescence, pump probe experimentation). An immediate goal of this research is the formation of metasurfaces with IR detector structures for modification of the spectral characteristics.

 

key words

Quantum dots; Metallic Nanoparticles; Lateral Epitaxial Overgrowth; Topological Materials; In situ control; Surface physics; Molecular beam epitaxy; Plasmonics and Metamaterials

Citizenship:  Open to U.S. citizens

Level:  Open to Postdoctoral and Senior applicants