Physics based device modeling is a critical component of advanced radio frequency (RF) circuit and sub-system design and analysis.  The device modeling suite under development in the Electronic Devices Branch (AFRL/RYDD) is divided into three main categories:  first-principles modeling of semiconductor crystals, semi-classical electron transport simulation and characterization of high-frequency transistors, and physics based compact modeling of high-frequency transistors.  Ab-initio characterization of semiconductor crystals is paramount for generating highly accurate compact models for RF designers.  To this end, this research will investigate the application of density functional theory to extract accurate physical models used to represent electron-phonon scattering processes in semiconductor crystals.  The calculation of deformation potentials for the beta phase of Gallium Oxide (beta-Ga2O3) is the central focus of this research opportunity.  Successful calculation of these semiconductor crystal properties will enable accurate macroscopic beta-Ga2O3 metal oxide semiconductor field effect transistor simulations for advanced RF power electronics engineering applications.

key words

Density functional theory; Gallium oxide; Electronic band structure; Electron-phonon coupling; Deformation potentials; Semiconductor crystals

Citizenship:  Open to U.S. citizens

Level:  Open to Postdoctoral and Senior applicants

Additional Benefits

Relocation

Awardees who reside more than 50 miles from their host laboratory and remain on tenure for at least six months are eligible for paid relocation to within the vicinity of their host laboratory.

Health insurance

A group health insurance program is available to awardees and their qualifying dependents in the United States.