RAP opportunity at Air Force Science and Technology Fellowship Program AF STFP
Investigation of Electronic Transport Properties of Transition Metal Nitrides
Location
Sensors Directorate, RY/Sensors Division
| opportunity |
location |
|
| 13.35.01.C0221 |
Wright-Patterson AFB, OH 454337542 |
Advisers
| name |
email |
phone |
|
| John Cetnar |
john.cetnar.1@us.af.mil |
937 713 8990 |
| Neil Austin Moser |
neil.moser@us.af.mil |
937.713.8739 |
Description
This research topic seeks to exploit unique properties of emerging semiconductor materials and their heterostructures for next generation electronic devices for high efficiency power and RF applications. Current emphasis is on the investigation of transition metal nitride materials and heterostructures with their metal alloys with respect to electronic transport properties for III-N HEMT applications. Research opportunities exist in epitaxial growth, characterization, theory, computation, device structure design and processing. Resultant device structures will be assessed for high power and high speed performance potential.
Hardy M. T, et al, Appl. Phys. Lett 110, 162104 (2017)
Saha B et al, Appl. Phys. Lett 110, 252104 (2017)
Deng R. et al, J. Appl. Phys 118, 015706 (2015)
key words
Semiconductors; Electronic transport; Electronic properties; Hall-effect; Heterostructures; High electron mobility transistors; RF electronics
Eligibility
Citizenship:
Open to U.S. citizens
Level:
Open to Postdoctoral and Senior applicants
Stipend
| Base Stipend |
Travel Allotment |
Supplementation |
|
| $95,000.00 |
$5,000.00 |
|
Experience Supplement:
Postdoctoral and Senior Associates will receive an appropriately higher stipend based on the number of years of experience past their PhD.
|