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RAP opportunity at Air Force Science and Technology Fellowship Program     AF STFP

Mid- and Long-Wavelength Infrared Single Band Detectors for Infrared Imaging

Location

Sensors Directorate, RY/Sensors Division

opportunity location
13.35.01.C0371 Wright-Patterson AFB, OH 454337542

Advisers

name email phone
Gamini Ariyawansa gamini.ariyawansa.2@us.af.mil 937 713 8984

Description

Our research interests include development of Infrared (IR) Materials,  Detectors, and Focal Plane Arrays (FPAs) utilizing group III-V materials, mainly Sb-based type II strained layer superlattices (SLSs), and novel detector architectures such as unipolar barrier detectors. Through design, material growth, and device fabrication, we are developing FPAs to cover either the mid wave infrared (MWIR) spectral band or the long wave infrared (LWIR) spectral band for passive imaging. Although there has been significant progress recently on the development of SLS technology, the performance has lagged behind that of the state-of-the-art HgCdTe counterpart. Novel SLS designs, innovative device concepts, and device fabrication processes are explored in order to achieve high performance and high temperature operation. Another area of interest includes low cost high operating temperature IR detectors developed using amorphous/polycrystalline materials such as PbS and PbSe. These detectors are monolithically fabricated on Si read-out integrated circuit (ROIC) chips in wafer scale, a process amenable to commercial-scale FPA manufacturing.

References:

1.       Gamini Ariyawansa, Matt Grupen, Joshua M. Duran, John E. Scheihing, Thomas R. Nelson, and Michael T. Eismann, "Design and modeling of InAs/GaSb type II superlattice based dual-band infrared detectors," Journal of Applied Physics 111 (7), 073107 (2012).

2.       Gamini Ariyawansa, Charles J. Reyner, Joshua M. Duran, Joshua D. Reding, John E. Scheihing, and Elizabeth H. Steenbergen, "Unipolar infrared detectors based on InGaAs/InAsSb ternary superlattices," Applied Physics Letters 109 (2), 021112 (2016).

3.       Min Ren, Scott Maddox, Yaojia Chen, Madison Woodson, Joe C. Campbell, and Seth Bank, "AlInAsSb/GaSb staircase avalanche photodiode," Applied Physics Letters 108 (8), 081101 (2016).

4.       T. S. Moss, "Lead Salt Photoconductors," Proceedings of the IRE 43.12, 1869 (1955).

 

 

key words
Infrared Detectors; MWIR; LWIR; Strained Layer Superlattice; Barrier Detectors; Lead Salt; Photoconductors

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral and Senior applicants

Stipend

Base Stipend Travel Allotment Supplementation
$95,000.00 $5,000.00

Experience Supplement:
Postdoctoral and Senior Associates will receive an appropriately higher stipend based on the number of years of experience past their PhD.

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