Our research team is exploring the potential of nanoscale vacuum field emission devices as an alternative to existing solid state microelectronics technologies for suitability in a variety of applications including, but not limited, to RF amplification and control, high power switching circuits, and on-chip vacuum pressure and gas sensing. Our work is aimed at simultaneously applying and advancing computational modeling and simulation in concert with rigorous experimentation to both validate predictions and expand the existing state-of-the-art of lateral device topologies. Our interests span both traditional and non-traditional materials systems including bulk thin film metals, wide bandgap semiconductors (i.e. SiC, GaN), and low dimensional systems (i.e. heterojunction 2D-electron gas, carbon nanotubes), including surface modifications, to enable robust low voltage, high current, operation in austere and space environments with minimal leakage and degradation. Goals include exceeding performance of solid state devices, stable device operation over long time scales and elevated temperatures, while utilizing geometries and materials amenable to large scale batch fabrication and tech transition. Our modeling and simulation interests span ab initio density functional theory predictions of work function and barrier potential, multiphysics device design and optimization with semi-analytical and finite element methods, and both DC and RF circuit design.

References:
N. Hernandez, et al J. Appl. Phys. (2024); 135 (20): 204305 doi:10.1063/5.0204235
N. Hernandez et al J. Appl. Phys. (2024); 136 (15): 155704 doi:10.1063/5.0234885
N. Hernandez, et al. JVST B, (2022), 40(5), 053201. doi: 10.1116/6.0001959

key words

nanoscale vacuum electronics; field emission devices; semiconductor heterojunction; density functional theory

Citizenship:  Open to U.S. citizens

Level:  Open to Postdoctoral and Senior applicants