The goal of this project is to investigate and optimize the electrical performance of existing devices, devising and investigating novel new devices (e.g.,nanoelectronic devices). Investigation of these devices through electrical characterization, limited physical characterization, and modeling will enable a better understanding of their limitation and potential. The information produced in this project will push the limits of the current state-of-the-art in electronics.

An example of this research includes, but is not limited to, the investigation of oxide semiconductors by investigating changes in electrical device performance due to changes in device fabrication. Components that could be studied are possible passivation needs, improvements in ohmic, Schottky contact formation, etc.

 

Reference

Green AJ, et al: IEEE Electron Device Letters 37(7): 2016

 

key words

Transistor; Power; Compound semiconductors; Oxide semiconductors; Nanoelectronic; Electronic Device; FET; HEMT; Microwave;

Citizenship:  Open to U.S. citizens

Level:  Open to Postdoctoral and Senior applicants

Additional Benefits

Relocation

Awardees who reside more than 50 miles from their host laboratory and remain on tenure for at least six months are eligible for paid relocation to within the vicinity of their host laboratory.

Health insurance

A group health insurance program is available to awardees and their qualifying dependents in the United States.