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RAP opportunity at Air Force Science and Technology Fellowship Program     AF STFP

First-Principles Semiconductor Modeling for Advanced Physics Based Device Models


Sensors Directorate, RY/Sensors Division

opportunity location
13.35.01.C0212 Wright-Patterson AFB, OH 454337542


name email phone
Matt Grupen 937.713.8191


Physics based device modeling is a critical component of advanced radio frequency (RF) circuit and sub-system design and analysis.  The device modeling suite under development in the Electronic Devices Branch (AFRL/RYDD) is divided into three main categories:  first-principles modeling of semiconductor crystals, semi-classical electron transport simulation and characterization of high-frequency transistors, and physics based compact modeling of high-frequency transistors.  Ab-initio characterization of semiconductor crystals is paramount for generating highly accurate compact models for RF designers.  To this end, this research will investigate the application of density functional theory to extract accurate physical models used to represent electron-phonon scattering processes in semiconductor crystals.  The calculation of deformation potentials for the beta phase of Gallium Oxide (beta-Ga2O3) is the central focus of this research opportunity.  Successful calculation of these semiconductor crystal properties will enable accurate macroscopic beta-Ga2O3 metal oxide semiconductor field effect transistor simulations for advanced RF power electronics engineering applications.

key words
Density functional theory; Gallium oxide; Electronic band structure; Electron-phonon coupling; Deformation potentials; Semiconductor crystals


Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral and Senior applicants


Base Stipend Travel Allotment Supplementation
$95,000.00 $5,000.00

Experience Supplement:
Postdoctoral and Senior Associates will receive an appropriately higher stipend based on the number of years of experience past their PhD.

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