The goal of this research project is to develop Si1-x-yGexSny for sensor applications: 1) remote sensing applications such as IR countermeasures, remote hyperspectral imaging, and high sensitivity chemical/biological weapons detection; 2) as a potential broad NIR, MWIR, and LWIR detector material for use in laser RADAR; 3) as a CMOS-compatible material for development of electro-optic integrated circuits (EOIC) including smart pixels for advanced focal plane arrays (FPAs); and 4) for free-space optical communication.

     The large size difference of the group IV elements Si, Ge, and Sn presents unique challenges which require the development of a new approach to allow synthesis of Sn containing alloys over a broad range of composition. Achieving this goal will require substantial effort in process development. Investigation of the gas phase chemistry and associated growth kinetics will provide a fundamental understanding of the surface physics and reaction chemistry involved in this process. Synthesis will be closely coupled with characterization of the basic structural, surface, electrical and optical properties of the resulting films to inform the growth optimization process.

G. Grzybowski, M. E. Ware, A. Kiefer, B. Claflin, J. Vac. Sci. Tech. B, DOI: 10.1116/6.0000406 (2020)

B. Claflin, G. J. Grzybowski, M. E. Ware, S. Zollner, and A. M. Kiefer, Front. Mater. 7:44.doi: 10.3389/fmats.2020.00044 (2020).

B. Wang, Z-Q. Fang, B. Claflin, D. Look, J. Kouvetakis, Y. K. Yeo, Thin Solid Films 654, 77 (2018).

key words

Semiconductor; Thin Film; Growth; Group-IV alloy; GeSiSn; GeSn; Characterization; X-ray photoelectron spectroscopy (XPS); Chemical Vapor Deposition (CVD);

Citizenship:  Open to U.S. citizens

Level:  Open to Postdoctoral and Senior applicants

Additional Benefits

Relocation

Awardees who reside more than 50 miles from their host laboratory and remain on tenure for at least six months are eligible for paid relocation to within the vicinity of their host laboratory.

Health insurance

A group health insurance program is available to awardees and their qualifying dependents in the United States.