NRC Research and Fellowship Programs
Fellowships Office
Policy and Global Affairs

Participating Agencies

  sign in | print

RAP opportunity at U.S. Army Research, Development & Engineering Command, NVESD     RDEC/NVESD

Semiconductor Growth, Characterization and Modeling for Advanced, Infrared Imaging Application


Night Vision/Electronic Sensors Directorate, Semiconductor Thin Films

opportunity location
33.01.01.B6714 Fort Belvoir, VA 220605806


name email phone
Leo Anthony Almeida 703.704.3243


Historically, HgCdTe has been the material of choice for infrared (IR) imaging applications because this compound semiconductor possesses a narrow band-gap, which can be varied with alloy composition. Therefore, the HgCdTe material system may be used to fabricate a wide variety of IR photodetectors with respect to IR spectral response. Future military systems require IR sensors that leap ahead current technology. It is anticipated that future sensors will extend current sensitivity and resolution as well as incorporate additional functionality and imaging modes. Molecular beam epitaxy (MBE) has emerged as the preferred growth technique for HgCdTe and related materials for the fabrication of advanced, high-performance, IR detectors. MBE offers precise control of crucial material parameters including alloy composition, bandgap, strain, doping, and growth rate. This control and flexibility enables advanced, complex device concepts.

This is an Opportunity to make significant contributions to state-of-the-art HgCdTe-based infrared imaging systems through the fundamental study of growth and device processing improvements. The Associate will be offered training and full control over an MBE chamber fully optimized for II-VI growth and capable of accepting a wide variety of source and substrate materials. Additionally, direct access is available to a complete suite of in-house and offsite material characterization tools including XRD, XPS, AES, SEM, and TEM, along with an in-house diode processing and testing laboratory for the direct fabrication of novel photovoltaic diode test structures. This Opportunity exists to make a vital impact on the most challenging problems currently facing the HgCdTe infrared community, including mitigation of performance-limiting defects in HgCdTe; very low doped non-equilibrium structures for high-temperature operation; multilayer junctions for multicolor devices; heteroepitaxy of HgCdTe on low-cost, large-area substrates, such as silicon, germanium, and gallium arsenide.


key words
Molecular beam epitaxy; MBE; Semiconductor; HgCdTe; Infrared detectors; Photodiodes; Narrow bandgap;


Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants


Base Stipend Travel Allotment Supplementation
$75,000.00 $2,000.00

Experience Supplement:
Postdoctoral Associates will receive an appropriately higher stipend based on the number of years of experience past their PhD.

Copyright © 2024. National Academy of Sciences. All rights reserved.Terms of Use and Privacy Policy