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RAP opportunity at National Security Agency     NSA

Basic and Applied Novel Materials and Devices Research


National Security Agency, Laboratory for Physical Sciences

opportunity location
36.01.00.C0509 College Park, MD 20740


name email phone
Adam L Friedman 301-935-6535


The Novel Materials and Devices for High Performance Computing research program at the Laboratory for Physical Sciences (LPS) explores spintronic and magnetoelectronic properties of devices that incorporate emerging materials such as topological materials, 2D materials, high performance semiconductors and heterostructures, and magnetic materials with a goal of establishing higher performance (speed, lower-power, greater versatility/functionality) for memory and logic applications and high performance computing beyond the paradigms established by Moore’s law. On-going research explores incorporating novel materials into legacy device designs for higher performance using standard geometries and also creating entirely new device paradigms for computational platforms of the future. This requires an ambitious research program that is focused on understanding the unknown basic properties of promising new materials, determining exactly which properties can be exploited to the greatest affect, and designing, fabricating, and testing devices that use these properties and that can be quickly transitioned into technologies. The program focuses on high risk, high reward research with the potential for disruptive, non-incremental technological and scientific discovery and implementation.

We are currently seeking self-motivated, hard-working, innovative post-docs for both basic and applied research. Specific on-going projects with opportunities for advanced post-doctoral research include:

(1) Magnetotransport, spintronics, magneto- and electro-optics of graphene, transition metal dichalcogenides, and novel 2D heterostructures

(2) Magnetotransport and spintronics of topological materials and topological/2D heterostructures.

(3) Magnetotransport and device design of magnetic phase based device structures and magnetic materials for MRAM applications

(4) Identification and fundamental property measurement of novel electronic/spintronic/magnetic materials

(5) Magnetoelectronic/spintronic device fabrication, design, testing, and engineering for use in STT/SOT-RAM applications and novel logic devices

The laboratory is well-equipped for cutting-edge research with a state-of-the-art clean room for device fabrication, full service electronics and machine shops staffed with professional electronics technicians and machinists, advanced microscopy and imaging tools, multiple magnetic field platforms up to high fields with a variety of variable temperature cryostats covering a range of milliKelvin-500 Kelvin for sample and device testing, probestations with advanced electronics for device testing and engineering, and optical property measurement systems for materials characterization. Work is done in close collaboration with academia, other government labs, and industry.

LPS is located in College Park, MD, just down the street from the University of Maryland-College Park in the Washington, DC Metropolitan area. Post-doctoral associates will benefit from our close relationship with UMD including access to additional facilities and equipment through the Maryland Nanocenter. The Washington, DC Metropolitan area is home to many commercial collaborators, universities, government laboratories, and sponsors. DC is not only a great place to live, but an ideal place for a new scientist to launch a career.


  •  G. M. Stephen, et al., “Weak antilocalization and anisotropic magnetoresistance in topological Bi2TexSe3-x thin films.” Scientific Reports 10, 4545 (2020).
  • A.L. Friedman, et al. Proximity effect induced spin relaxation in WS2/graphene/fluorographene non-local spin valve devices. Carbon 131, 18 (2018).
  •  A.L. Friedman, et al. Evidence of chemical vapor induced 2H to 1T phase transition in MoX2 (X=Se, S) transition metal dichalcogenide films. Scientific Reports 7, 3836 (2017).
  • A.L. Friedman, et al. Electronic transport and localization in nitrogen substitutionally doped graphene devices using hyperthermal ion implantation. Phys. Rev. B Rap. Comm. 83, 161409(R) (2016).
  • A.L. Friedman, et al. Hydrogenated graphene as a homoepitaxial tunnel barrier for charge and spin transport in graphene. ACS Nano 9, 6747 (2015).
  • A.L. Friedman, et al. Homoepitaxial tunnel barriers with functionalized graphene on graphene for charge and spin transport. Nature Communications 5, 3161 (2014).
  • O.M.J. van ‘t Erve, et al. Low-resistance spin injection into silicon using graphene tunnel barriers. Nature Nanotechnology 7, 737 (2012).

key words
novel materials; spintronics; transport; high performance computing; device physics; 2D materials; topological materials; magnetic materials; magnetism; electronics


Citizenship:  Open to U.S. citizens, permanent residents and non-U.S. citizens
Level:  Open to Postdoctoral and Senior applicants


Base Stipend Travel Allotment Supplementation
$86,335.00 $3,000.00
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