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RAP opportunity at National Security Agency     NSA

2D Materials and Devices for High Performance Computing


National Security Agency, Laboratory for Physical Sciences

opportunity location
36.01.00.C0511 College Park, MD 20740


name email phone
Aubrey Hanbicki (202) 935-6087


The Novel Materials and Devices for High Performance Computing research program at the Laboratory for Physical Sciences (LPS) is currently seeking a researcher to integrate with our 2D materials effort. There are two main research areas we are pursuing: (1) novel materials characterization, and (2) device fabrication using 2D heterostructures. In the first area we are interested in identifying candidate materials with properties that would make them useful for future computing applications. This could include alternate state variable computing, novel magnetic behavior, or optoelectronic transduction. The second area involves stacking layers with a materials-by-design approach to create devices with new or improved properties or advanced functionality. An example is creating interlayer excitons in heterostructures of transition metal dichalcogenides. 2D materials research at LPS is performed with confocal optical spectroscopy including temperature-dependent photoluminescence, electroluminescence, Raman spectroscopy, differential reflectivity and photoconductivity. Several platforms for magnetotransport are also available. Eligible candidates with experience in 2D materials processing, nanofabrication and/or optoelectronic characterization are encouraged to apply.

LPS is located just off the main campus of the University of Maryland in College Park, MD. Work is done in close collaboration with UMD researchers as well as other area academic institutions, other government labs, and industry. The Washington, DC Metropolitan area is not only a great place to live, but an ideal place for a new scientist to launch a career.


P.D. Cunningham, A.T. Hanbicki, et al. Resonant Optical Stark Effect in Monolayer WS2. Nat. Commun. 10 (2019) 5539.

 A.T. Hanbicki, et al. Double Indirect Interlayer Exciton in a MoSe2/WSe2 van Der Waals Heterostructure. ACS Nano 12 (2018) 4719.

 A.T. Hanbicki, et al. Optical Polarization of Excitons and Trions under Continuous and Pulsed Excitation in Single Layers of WSe2. Nanoscale 9 (2017) 17422. 

P.D. Cunningham, A.T. Hanbicki, et al. Photoinduced Bandgap Renormalization and Exciton Binding Energy Reduction in WS2. ACS Nano 11 (2017) 12601.

key words
2D materials; transition metal dichalcogenides; optoelectronics; valleytronics; spintronics; 2D heterostructures; Raman; transport; magneto-transport; novel materials


Citizenship:  Open to U.S. citizens, permanent residents and non-U.S. citizens
Level:  Open to Postdoctoral and Senior applicants


Base Stipend Travel Allotment Supplementation
$86,335.00 $3,000.00
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