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RAP opportunity at National Security Agency     NSA

Integrated Photonic Devices for High Performance Computing Interconnects


National Security Agency, Laboratory for Physical Sciences

opportunity location
36.01.00.C0523 College Park, MD 20740


name email phone
Karen Grutter 301.935.6440


High-performance computing interconnects are currently electronic for links shorter than 3 m. However, as the required bandwidth increases, electrical interconnects become more inefficient and have higher latency. Integrated photonic interconnects could offer an energy-efficient solution to these increasing bandwidth demands, but more device research is required to be competitive with the existing electronic technologies.

Our group is looking for researchers who are interested in developing photonic devices, including 2D-material-based modulators, low-noise detectors, and precision photonic packaging solutions, to enable efficient interconnects both at room temperature in cryogenic environments. We design photonic integrated circuits using finite-difference time-domain (FDTD) and finite element method (FEM) simulation software, and fabricate our devices in-house using state-of-the-art nanofabrication tools, including E-beam lithography writers and a 2D film stacker. We have several room-temperature and cryogenic photonic characterization stations. We are looking for researchers with relevant skills that may include photonic device design, nanofabrication, 2D material characterization, and integrated photonic device characterization.

key words
integrated photonics; 2D materials; nanofabrication


Citizenship:  Open to U.S. citizens, permanent residents and non-U.S. citizens
Level:  Open to Postdoctoral and Senior applicants


Base Stipend Travel Allotment Supplementation
$86,335.00 $3,000.00
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