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RAP opportunity at National Security Agency     NSA

Antiferromagnetic Spintronics for High-Performance Computing


National Security Agency, Laboratory for Physical Sciences

opportunity location
36.01.00.C0748 College Park, MD 20740


name email phone
Adam L Friedman 301-935-6535


Antiferromagnets provide several key advantages over conventional ferromagnetic materials for potential next-generation computational devices, such as higher speeds, device density, and better resilience to external fields. However, without a net magnetic moment, manipulation and detection of the orientation can be non-trivial. Conceptually, antiferromagnets can be utilized in the much the same way as ferromagnets, e.g. spin-orbit torque (SOT) or spin-transfer torque (STT) switching. The efficient spin-to-charge conversion in topological materials makes them ideal for controlling antiferromagnetic materials. The objective of this research is to better understand electrical switching of zero-moment magnetic materials, such as antiferromagnets and compensated ferrimagnets, and how best to utilize them for high performance computer memory and logic devices.

LPS currently has opportunities for post-doctoral research in basic physics and engineering of antiferromagnetic films and devices as well as more applied research for applications to high performance computing and hardware trust. LPS invites candidates with expertise in cleanroom-based device fabrication, magnetotransport measurements, magnetometry, and optical measurements of magnetic and topological materials.

LPS is well-equipped for cutting-edge research with a state-of-the-art clean room for device fabrication, a full service machine shop staffed with professional machinists, advanced microscopy and imaging tools, multiple magnetic field platforms up to high fields with a variety of variable temperature cryostats covering a range of 250 milliKelvin-500 Kelvin with advanced electronics for device testing and engineering, and optical property measurement systems for materials characterization. Work is done in close collaboration with academia, other government labs, and industry.


Recent publications:

  •            G. M Stephen et al. Nonlocal Measurement as a Probe of the Spin Hall Effect in Topological Insulators. Physical Review Applied, 16(3), 034007. (2021)
  •             G.M. Stephen et al. Room-Temperature Spin Transport in Cd3As2. ACS Nano, 15(3), 5459–5466 (2021)
  •       G.M. Stephen et al. Effect of Sn Doping on Surface States of Bi2Se3 Thin Films. The Journal of Physical Chemistry C, 124(49), 27082–27088. (2020)
  •       G.M. Stephen et al Weak Antilocalization and Anisotropic Magnetoresistance as a Probe of Surface States in Topological Bi2TexSe3−x Thin Films. Scientific Reports, 10(1), 4845. (2020)
key words
antiferromagnet; spintronics; memory; logic; computing; magnetism; transport; topological materials; magnetic materials; device physics


Citizenship:  Open to U.S. citizens, permanent residents and non-U.S. citizens
Level:  Open to Postdoctoral and Senior applicants


Base Stipend Travel Allotment Supplementation
$86,335.00 $3,000.00
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