RAP opportunity at National Institute of Standards and Technology NIST
Broadband Nanoimaging of Optically Excited Free Carriers
Location
Physical Measurement Laboratory, Applied Physics Division
opportunity |
location |
|
50.68.62.B5520 |
Boulder, CO |
NIST only participates in the February and August reviews.
Advisers
name |
email |
phone |
|
Pavel Kabos |
pavel.kabos@nist.gov |
303.497.3997 |
T. Mitchell Wallis |
mwallis@boulder.nist.gov |
303.497.5089 |
Description
The successful design and deployment of next-generation electronic and optoelectronic nanoscale devices will require a detailed understanding of the underlying electronic structure and the electronic response to external stimuli. We seek to understand nanoscale variations in conductivity by leveraging our existing capabilities in AFM-based microwave impedance microscopy (sMIM) to develop new imaging and metrological capabilities for studying nanoscale electronic properties. In particular, we are interested in combining time-resolved optical techniques with our microwave methods to study locally generated carriers and to study their decay and transport across heterointerfaces (p-n junctions, materials interfaces, etc). We seek a researcher to work with us to help develop new tools to study nanoscale electronic devices. Scanning probe and/or optics experience is preferred.
key words
Microwave; Nanoscale; Scanning probe microscopy; Near-field optics;
Eligibility
Citizenship:
Open to U.S. citizens
Level:
Open to Postdoctoral applicants
Stipend
Base Stipend |
Travel Allotment |
Supplementation |
|
$82,764.00 |
$3,000.00 |
|
|