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RAP opportunity at National Institute of Standards and Technology     NIST

First-Principle Based Modeling for Advancing 2D Electronics


Material Measurement Laboratory, Materials Science and Engineering Division

opportunity location
50.64.21.B8083 Gaithersburg, MD

NIST only participates in the February and August reviews.


name email phone
Benjamin Paul Burton 301.975.6043
Francesca Tavazza 301.975.8496


To design novel 2D materials and devices (e.g., sensors and transistors), we are interested in Density Functional Theory (DFT) and/or Tight Binding (TB) based modeling of phase diagrams, electronic-, and transport-properties in 2D-like materials, such as MoS2. An important part of this project will be the simulation of actual devices and the determination of how transport properties are affected by defects, impurities, and other realistic deviations from ideality. Because this project will be conducted in close collaboration with experimentalists, direct comparison with measured data will be possible; and modeling results will be used to interpret experimental data and to guide subsequent experimental work.


key words
DFT; 2D materials; Electronic devices; Simulation; Transport properties; Phase-diagram;


Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants


Base Stipend Travel Allotment Supplementation
$82,764.00 $3,000.00
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