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RAP opportunity at National Institute of Standards and Technology     NIST

EUV Photoresist Chemistry and Structure


Material Measurement Laboratory, Materials Science and Engineering Division

opportunity location
50.64.21.C0917 Gaithersburg, MD

NIST only participates in the February and August reviews.


name email phone
Daniel Sunday 301-975-4921


Euv lithography has become a primary manufacturing tool for the semiconductor industry, but new challenges in the development and characterization of EUV resists have emerged as the technology continues to push patterning  to new limits. There are significant needs to understand how the components in these resists are distributed, and critically whether there is aggregation that could contribute to roughness. Vertical segregation is also becoming a challenge, where surface energy differences drive resist components to a non-uniform vertical distribution, also potentiall changing the roughness profile. Furthermore, there is a need to understand how EUV resists may interface with other processing approaches such as block copolymer lithography. This project will utilize chemically sensitive scattering tools, such as soft X-rays, to study the distribution of components in the resist and how they change with different processing steps.                                                                                                                        

key words
Lithography; Photoresist; X-ray;


Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants


Base Stipend Travel Allotment Supplementation
$82,764.00 $3,000.00
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