NRC Research and Fellowship Programs
Fellowships Office
Policy and Global Affairs

Participating Agencies

  sign in | focus

RAP opportunity at National Institute of Standards and Technology     NIST

Secondary Ion Mass Spectrometry (SIMS)

Location

Material Measurement Laboratory, Materials Measurement Science Division

opportunity location
50.64.31.C0754 Gaithersburg, MD

NIST only participates in the February and August reviews.

Advisers

name email phone
Evan Groopman evan.groopman@nist.gov 301 975 2139

Description

Secondary ion mass spectrometry (SIMS) is used for chemical and isotopic analysis of micrometer-scale volumes of material. Dynamic SIMS continuously sputters a sample, modifying the sample surface chemistry with the primary implanted species, to achieve trace element sensitivity down to nmol/mol (parts per billion) or isotope fractionation determinations down to one part in one thousand or better. Both large- and small-geometry dynamic SIMS instruments are available at NIST. Current projects include improving and standardizing actinide particle analyses, quantifying solar wind ion implants in collector materials from NASA's Genesis Discovery Mission, and developing new measurement paradigms (e.g., new primary ion species, sample flooding species, and multicollection schemes).

key words
SIMS; particles; semiconductors; mass spectrometry; surface analysis

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants

Stipend

Base Stipend Travel Allotment Supplementation
$82,764.00 $3,000.00
Copyright © 2024. National Academy of Sciences. All rights reserved.Terms of Use and Privacy Policy