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RAP opportunity at National Institute of Standards and Technology     NIST

Scanning Probe Metrology


Physical Measurement Laboratory, Nanoscale Device Characterization Division

opportunity location
50.68.03.B1498 Gaithersburg, MD 20899

NIST only participates in the February and August reviews.


name email phone
Joseph J. Kopanski 301.975.2089


We are developing scanning probe microscopes to characterize and manipulate the physical and electrical properties of electronic devices, semiconductors, and related materials at the nanometer resolution scale. Projects are aimed at impacting silicon technology +5 years in the future or at characterization problems unique to compound semiconductors or three-dimensional integrated circuits and through-silicon-vias (TSVs). We recently developed scanning capacitance microscopy as a tool for measuring the two-dimensional dopant profile across a silicon p-n junction. We are particularly interested in projects to develop techniques to measure material properties in three dimensions and that have spatial resolution below 1-nm. Our interests extend to other scanning probe techniques, including scanning micorwave microscopy, surface photovoltage microscopy, and other optically pumped probes.


key words
Atomic force microscopy; Electrical properties; Nanoscale analysis; Semiconductor doping;


Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants


Base Stipend Travel Allotment Supplementation
$82,764.00 $3,000.00
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