NRC Research Associate Programs
Fellowships Office
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Participating Agencies

RAP opportunity at National Institute of Standards and Technology     NIST

Power Electronics Performance and Reliability

Location

Physical Measurement Laboratory, Nanoscale Device Characterization Division

opportunity location
50.68.03.B7333 Gaithersburg, MD 20899

NIST only participates in the February and August reviews.

Advisers

name email phone
Kin P. Cheung kin.cheung@nist.gov 301.975.3093

Description

Wide bandgap power device is poised to transform the energy landscape of the United States. However, reliability concern remains a key hurdle. In many power applications, failure is not an option. How can we assure that high reliability is achieved? This is a very hard problem in need of a solution. We focus on the physics of reliability and develop physics based electrical measurement methods that the industry can use and their customer can trust.

 

key words
Power device; Defect; Wide bandgap; SiC; GaN; Ga2O3; Electrical characterization; Reliability

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants

Stipend

Base Stipend Travel Allotment Supplementation
$82,764.00 $3,000.00
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