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RAP opportunity at National Institute of Standards and Technology     NIST

High Frequency Electrical Metrology for Three-Dimensional Integrated Circuits


Physical Measurement Laboratory, Nanoscale Device Characterization Division

opportunity location
50.68.03.B8259 Gaithersburg, MD 20899

NIST only participates in the February and August reviews.


name email phone
Yaw S Obeng 301.975.8093


We work in close collaboration with the electronics and ancillary industries on their long-term metrology needs. For example, emerging integrated devices architectures, such as three-dimensional integrated circuits (3D-ICs), are poised to open up new avenues for more powerful functionally diverse electronics devices. Unfortunately, there is a lack of appropriate metrology to determine the performance and reliability of these emerging devices. This is hampering the commercialization of these potentially transformative devices. We are working on the science that will underpin the development of the needed metrology to close this gap.

The ideal candidates would have some understanding of high frequency electrical characterization, as well as substantial knowledge and experience with material science, chemistry or physics.



Lin Y; Okoro CA.; Ahn JJ; et al: Broadband Microwave-Based Metrology Platform Development: Demonstration of In-Situ Failure Mode Diagnostic Capabilities for Integrated Circuit Reliability Analyses. ECS Journal of Solid State Science and Technology 4(1) SI: N3113-N3117, 2015

Okoro CA, et al: A Detailed Failure Analysis Examination of the Effect of Thermal Cycling on Cu TSV Reliability., IEEE Transactions on Electron Devices 61(1): 15-22, 2014


key words
High frequency measurements; Microwave frequency measurements; Semiconductor; Three dimensional integrated circuits; Through silicon vias (tsv); Emerging devices;


Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants


Base Stipend Travel Allotment Supplementation
$82,764.00 $3,000.00
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