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RAP opportunity at National Institute of Standards and Technology     NIST

Single Electron Devices for Quantum Information and Metrology in Silicon


Physical Measurement Laboratory, Nanoscale Device Characterization Division

opportunity location
50.68.03.B8478 Gaithersburg, MD 20899

NIST only participates in the February and August reviews.


name email phone
Michael David Stewart 301.975.4690


Silicon-based single electron devices (SED) allow control and measurement of both the spin and charge degrees of freedom for individual electrons. This control imbues SEDs with a wide array of applications, including quantum information (QI) and electrical current standards. We are working to build viable qubits in silicon and an electrical current standard necessary for the redefinition of the SI by focusing on understanding the fundamental limitations of quantum mechanical control and manipulation. Our strategy is to explore these limitations through high-frequency, low-temperature coherent measurements, charge pumping measurements, and standard defect measurements in both quantum dot-based devices and atomically precise single-atom devices in silicon.


key words
Quantum information; Quantum computing; Quantum measurement; Redefinition of SI; Current standard; Quantum dot; Single-atom device; Single electron device;


Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants


Base Stipend Travel Allotment Supplementation
$82,764.00 $3,000.00
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