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RAP opportunity at National Institute of Standards and Technology     NIST

Advanced Electronic Structure Measurements of Novel Materials and Devices


Physical Measurement Laboratory, Nanoscale Device Characterization Division

opportunity location
50.68.03.B8528 Gaithersburg, MD 20899

NIST only participates in the February and August reviews.


name email phone
Sujitra J Pookpanratana 301.975.4050


The future of nanoelectronic technologies requires new device concepts and novel materials. The electronic (band) structure and energy band levels are defining electronic properties that govern how an electronic device operates, and these properties are dependent on many factors such as heterointerfaces formed and its microstructure. In this opportunity, we will investigate the electronic properties of candidate quantum materials or organic (molecular) semiconductors. We will use and develop measurement approaches to determine key electronic properties such as electron-based spectroscopies, nanometer-scale imaging with energy filtering using a photoemission electron microscope (PEEM), and other optical measurements. Research is done in close collaboration with other groups at NIST with expertise in complementary measurement techniques, materials growth, and device fabrication.



Pookpanratana S, et al: “Non-volatile memory devices with redox-active diruthenium molecular compound.” Journal of Physics: Condensed Matter 28: 094009, 2016

Pookpanratana S, Lydecker LK, Richter CA, C. A. Hacker CA: “Self-Assembled Monolayers Impact Cobalt Interfacial Structure in NanoElectronic Junctions.” Journal of Physical Chemistry C 119: 6687, 2015

Goetz KP, Tsutsumi J, Pookpanratana S, et al: “Polymorphism in the organic charge-transfer complex dibenzotetrathiafulvalene-7,7,8,8-tetracyanoquinodimethane (DBTTF-TCNQ) and its effect on optical and electrical properties.” Advanced Electronic Materials 2: 1000203, 2016


key words
Electronic structure; Nanoelectronics; Organic electronics; Photoemission; PEEM; Molecular films; Nanotechnology; Interfaces; Electron spectroscopy; Quantum materials; semiconductors


Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants


Base Stipend Travel Allotment Supplementation
$82,764.00 $3,000.00
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