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RAP opportunity at National Institute of Standards and Technology     NIST

Relating Physics to Performance in Organic Electronic Devices


Physical Measurement Laboratory, Nanoscale Device Characterization Division

opportunity location
50.68.03.C0305 Gaithersburg, MD 20899

NIST only participates in the February and August reviews.


name email phone
Emily Geraldine Bittle 301-975-6298


Novel semiconductors are developed and studied for their unique materials, optical, and electrical properties, such as flexibility, printability, and advanced exciton dynamics. To exploit these properties in devices, we must build understanding and control of the charge generation and transport, such as phonon interactions and exciton dynamics, while also controlling the factors imposed by final electrical device structures. Material interfaces in electrical devices can offer hindrances or opportunities in device design, as large electrical resistances and trap sites can result in lower performance and mask desired properties, while energetic levels can be created or suppressed at a carefully designed interfaces. This opportunity will explore the physics of unique electrical and photo-active properties in novel semiconductors in direct relationship to final device performance and design. Materials of interest include, but are not limited to, small molecule single crystal organic semiconductors, polymers, 2D materials, and metal-organic interfaces, and electrical test structures include transistors and heterojunction devices (light emitting diodes, photovoltaics). Collaborations on materials measurements take advantage of in-house capabilities in optics, electron microscopy, etc. Advanced electrical characterization techniques, including low temperature current-voltage, impedance and CV, magneto-photocurrent and electroluminescence, are used to measure carefully crafted (opto-)electronic devices specifically designed and fabricated in-lab to elucidate the mechanisms driving performance.

key words
organic electronics; polymers; light emitting diode; photovoltaics; transistors; electrical characterization; impedance;


Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants


Base Stipend Travel Allotment Supplementation
$82,764.00 $3,000.00
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