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Opportunity at National Institute of Standards and Technology   NIST

Physics and applications of high binding energy excitons

Location

Physical Measurement Laboratory, Nanoscale Device Characterization Division

opportunity location
50.68.03.C0862 Gaithersburg, MD 20899

Please note: This Agency only participates in the February and August reviews.

Advisers

name email phone
Emily Geraldine Bittle emily.bittle@nist.gov 301-975-6298
Jared Kenneth Wahlstrand jared.wahlstrand@nist.gov 301-975-2547

Description

Excitons with high binding energy (HBEE) provide a possible route toward room temperature sensing and future computing. In this project, we explore the physics and applications of materials and polariton systems with HBEE using ultrafast spectroscopy techniques, electronic and magnetic control, and materials and sample design. Materials of interest include organic molecules and polymers, 2D materials, perovskites, etc. Ultrafast optical techniques include TAS, time-resolved fluorescence, 2D spectroscopy, and pump-probe spectral interferometry. Opto-electronic device studies include design, fabrication, and measurement using NIST's nanofab, low temperature current-voltage, impedance and CV, electroluminescence, and photocurrent.

key words
exciton; semiconductor; spectroscopy; optical; electronic

Eligibility

Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants

Stipend

Base Stipend Travel Allotment Supplementation
$82,764.00 $3,000.00
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