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RAP opportunity at National Institute of Standards and Technology     NIST

Quantum Information Applications of Si Single Electron Tunneling Devices


Physical Measurement Laboratory, Engineering Physics Division

opportunity location
50.68.31.B7002 Gaithersburg, MD

NIST only participates in the February and August reviews.


name email phone
Neil M. Zimmerman 301.975.5887


Tunable-barrier Si single-electron tunneling (SET) devices give us the possibility of moving and manipulating single electrons. Through this control, we can form quantum dots that have just one electron on them and manipulate them in coherent and non-coherent ways. Our ultimate goal is to investigate charge and spin qubits in these devices. We are investigating such issues as: (1) What does it mean to open a switch (i.e., how do electrons make the transition from a delocalized cloud of continuous charge to discrete packets of charge)? (2) What are the possible advantages of tunable barrier devices, including the ability to form a dot with only one electron in the conduction band? (3) What are sources of decoherence (e.g., defect motion at the interfaces)?


key words
Nanoscale electronics; Quantum computing; Quantum information; Single-electron devices;


Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants


Base Stipend Travel Allotment Supplementation
$82,764.00 $3,000.00
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