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RAP opportunity at National Institute of Standards and Technology     NIST

Broadband Nanoimaging of Optically Excited Free Carriers


Physical Measurement Laboratory, Applied Physics Division

opportunity location
50.68.62.B5520 Boulder, CO

NIST only participates in the February and August reviews.


name email phone
Pavel Kabos 303.497.3997
T. Mitchell Wallis 303.497.5089



The successful design and deployment of next-generation electronic and optoelectronic nanoscale devices will require a detailed understanding of the underlying electronic structure and the electronic response to external stimuli. We seek to understand nanoscale variations in conductivity by leveraging our existing capabilities in AFM-based microwave impedance microscopy (sMIM) to develop new imaging and metrological capabilities for studying nanoscale electronic properties. In particular, we are interested in combining time-resolved optical techniques with our microwave methods to study locally generated carriers and to study their decay and transport across heterointerfaces (p-n junctions, materials interfaces, etc). We seek a researcher to work with us to help develop new tools to study nanoscale electronic devices. Scanning probe and/or optics experience is preferred.



key words
Microwave; Nanoscale; Scanning probe microscopy; Near-field optics;


Citizenship:  Open to U.S. citizens
Level:  Open to Postdoctoral applicants


Base Stipend Travel Allotment Supplementation
$82,764.00 $3,000.00
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