This research focuses on the surface chemistry of diamonds and other wide bandgap materials (e.g., SiC, AIN, BN, GaN), and post-growth modification of these surfaces for device applications. Specific interests include (1) chemical modification of surfaces in ultrahigh vacuum (UHV) to determine the structure and chemistry of low-index surfaces; (2) the effects of surface chemisorption and processing-based manipulation on electronic properties such as electron affinity and electrical conductivity, for vacuum microelectronics and other applications; (3) the role of surface structure and chemistry in the nucleation and growth of doped epitaxial films; and (4) the surface reaction mechanisms and kinetics of novel precursors for chemical vapor deposition and doping.

Extensive surface science facilities include three UHV systems equipped with a variety of surface analysis tools, including a load-locked UHV analysis and chemical vapor deposition processing system with gas dosing and temperature control. In situ analysis includes high-resolution electron energy loss spectroscopy; Auger electron, ultraviolet photoelectron, and x-ray photoelectron spectroscopies; low-energy electron diffraction; work function measurement using Kelvin probe; collinear four-point probe; infrared reflection absorption spectroscopy; attenuated total internal reflection; and multi-mass temperature programmed desorption.