This research focuses on the growth and characterization of magnetic/semiconductor heterostructures in order to understand the role of the interface in mediating such properties as magnetic film anisotropy, spin-polarized charge transport, and magneto-optical effects. Knowledge of the evolving physical and chemical structure of both the interface and magnetic film is important in understanding these systems. Samples are prepared utilizing a variety of thin-film growth facilities, including a multiple growth chamber molecular beam epitaxy (MBE) machine, which permits the study of magnetic films deposited directly on MBE-grown surfaces of II-VI or III-V semiconductor epilayers. These epilayers offer a wide variety of controllable surface reconstructions and chemistry, enabling us to systematically study the role of the interface in determining the macroscopic properties of these technologically important heterostructures. Each chamber includes either reflection high-energy electron diffraction or low-energy electron diffraction with video data acquisition equipment. Post-growth characterization facilities include x-ray diffraction, magnetometry (superconducting quantum interference device and vibrating sample), magneto-optics, transport, ferromagnetic resonance, and extensive computer modeling programs of the electron forward scattering data.

 

References

Fan Y, et al: Physical Review B 85: 165311, 2012

Zhao HB, et al: Physical Review B 83: 212302, 2011

Kioseoglou G, et al: Applies Physics Letters 94: 122106, 2009)

 

key words

Electron scattering; Heterostructures and heterojunctions; Interfaces; Magnetic films; Metal films; Molecular beam epitaxy;

Citizenship:  Open to U.S. citizens and permanent residents

Level:  Open to Postdoctoral applicants