RAP opportunity at Naval Research Laboratory NRL
Epitaxial Growth and Characterization of Metal Oxide and Nitride Thin Films
Location
Naval Research Laboratory, DC, Electronics Science & Technology Division
| opportunity |
location |
|
| 64.15.25.B8530 |
Washington, DC 203755321 |
Advisers
| name |
email |
phone |
|
| Neeraj Nepal |
neeraj.nepal.civ@us.navy.mil |
202.404.4621 |
Description
Wide and ultra-wide band gap semiconductors such as group III-nitrides and -oxides are of research interest for next generation RF and compact power systems. This project focuses on epitaxial growth and characterization of group-III and transition metal nitrides, oxides, complex oxides, and oxide/nitride heterojunctions for high power and frequency device application. Epitaxial thin films and heterostructures will be grown by molecular beam epitaxy and/or atomic layer deposition/epitaxy and characterized by various structural, morphological, electrical, and optical characterization techniques.
References
Nepal N, et al: Applied Physics Express 9: 021003, 2016
Nepal N, et al: Thin Solid Films 589: 47, 2015
Nepal N, et al: Crystal Growth and Design 13: 1485, 2013
key words
Epitaxial thin films; MBE growth; III-nitrides; Metal oxides; Complex oxides; ALD/E; High frequency materials; Growth and characterization;
Eligibility
Citizenship:
Open to U.S. citizens and permanent residents
Level:
Open to Postdoctoral applicants
Stipend
| Base Stipend |
Travel Allotment |
Supplementation |
|
| $94,199.00 |
$3,000.00 |
|
|