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RAP opportunity at Naval Research Laboratory     NRL

Ultra-wide bandgap semiconductor devices and materials

Location

Naval Research Laboratory, DC, Electronics Science & Technology Division

opportunity location
64.15.25.C0106 Washington, DC 203755321

Advisers

name email phone
Marko Jak Tadjer marko.tadjer@nrl.navy.mil 202 767 0655

Description

Ultra-wide power electronics is an emerging field based on advances in the growth of ultra-wide bandgap (> 4.5 eV) semiconductors. This opportunity involves the characterization of such materials and the fabrication and characterization of electronic devices (diodes, transistors, etc.) based on or integrating such materials. Fundamental understanding of material properties such as doping, defects, and conductivity is needed. Advanced characterization techniques are available and tailoring them for use with ultra-wide bandgap semiconductors is a part of this project.

key words
Gallium Oxide; Ga2O3; III-Oxide; III-Nitride; Diamond; High Voltage; High Power; Ultra-Wide Bandgap; Power Electronics;

Eligibility

Citizenship:  Open to U.S. citizens and permanent residents
Level:  Open to Postdoctoral applicants

Stipend

Base Stipend Travel Allotment Supplementation
$99,200.00 $3,000.00
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