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RAP opportunity at Naval Research Laboratory     NRL

Computational materials design and engineering

Location

Naval Research Laboratory, DC, Electronics Science & Technology Division

opportunity location
64.15.25.C0893 Washington, DC 203755321

Advisers

name email phone
Saikat Mukhopadhyay saikat.mukhopadhyay.civ@us.navy.mil 202.404.8712

Description

We are developing theoretical models to establish structure-property relationship so that novel materials can be designed for targeted applications. This involves investigating materials properties in bulk, alloys and interfaces and their transport properties as a function of defects and impurities. Our primary objective is to tune electronic, thermodynamics and vibrational properties of materials/interfaces/alloys to access improved optical, electronic and thermal properties. A wide range of theoretical methods ranging from density functional theory (DFT) to molecular dynamics (MD) to finite element methods will be used to calculate materials properties and derive the impact of materials engineering on the devise performance.  This work will often collaborate with leading experimental groups, in particular, at NRL.

References

1. S. Mukhopadhyay*, Brian D Wirth; “Revisiting W–ZrC interfaces: A first principles studyJ. Appl. Phys. 132, 035301, (2022).

2. S. Mukhopadhyay*, C. T. Ellis, D. C. Ratchford, E. M. Jackson, J. G. Tischler, T. L. Reinecke, M. D. Johannes*; “Natural hyperbolicity in bulk calciteJ. Appl. Phys. 130, 143101 (2021).

3. S. Mukhopadhyay*, D. S. Parker, B. C. Sales, A. Puretzky, M. A. McGuire, L. Lindsay*; “Two-channel model for ultralow thermal conductivity of crystalline Tl3VSe4”, Science 360, 1455–1458 (2018). 

4. S. Mukhopadhyay, T. Thompson, J. Sakamoto, A. Huq, J. Wolfenstine, J. L. Allen, N. Bernstein, D. A. Stewart, M. D. Johannes; “Structure and stoichiometry in supervalent doped Li7La3Zr2O12” Chem. Mater. 27, 3658 (2015).

key words
Keywords: Semiconductors; Superlattices; Phonons; Surfaces; Interfaces; Spins; Materials science; Transport properties; Optical properties; 2D materials; Graphene; Thermal transport; Thermoelectric materials. Finite-element methods; Machine learning methods; Device simulation; Materials design; DFT; MD; AIMD.

Eligibility

Citizenship:  Open to U.S. citizens and permanent residents
Level:  Open to Postdoctoral applicants

Stipend

Base Stipend Travel Allotment Supplementation
$99,200.00 $3,000.00
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