Silicon-based devices are rapidly approaching fundamental performance limits; therefore, next-generation computing and power switching needs require advanced high-performance devices based on novel electronic materials. To meet these requirements, wide-bandgap materials such as GaN, SiC, and Diamond have been proposed for power switching and RF devices. This research opportunity will (1) study the fundamentals of dopant activation in wide-bandgap materials, (2) develop high voltage III-N, III-O, and Diamond power devices, and (3) investigate novel devices resulting from the integration of these materials, including graphene and diamond/lll-N heterojunctions.

Refs:

Silicon Ion Implant Activation in beta-(Al0.2Ga0.8)2O3, JEM 53, pg 2811-2816 (2024) https://link.springer.com/article/10.1007/s11664-024-11075-z

Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices, Crystals 13(5), 736 (2023) https://doi.org/10.3390/cryst13050736