Future GaN and AlGaN vertical power electronic devices will require controlled selective area doping. Ion implantation and activation annealing can be used in a variety of applications, such as contact regions, JFET plug regions, edge termination regions, etc.  Defects resulting from the implantation need to be analyzed and mitigated, as defects can degrade carrier mobility, compensate doping, and lead to transient trapping phenomenon. This opportunity involves advanced processing, characterization, and computational modeling of GaN and AlGaN.