Single crystal diamond, an ultra-wide bandgap semiconductor, has applications in the field of power electronics and quantum systems because of its extreme material properties.  This opportunity involves the growth and characterization of intrinsic and doped single crystal diamond via chemical vapor deposition for such applications.  Specific areas of interest include: 1) the impact of crystallographic orientation on defect density and material quality, 2) n-type doping with phosphorous for diamond based devices, 3) color center creation via Group IV elements (Si, Ge, Sn, and Pb) for quantum communications & sensors.  A fundamental understanding of crystallography, epitaxy and doping will be helpful. 

Advanced fabrication and characterization techniques are available for this research including: X-ray diffraction, XPS, RIE, SEM, AFM, Raman

 

References:

1. “Diamond for Electronics: Materials, Processing and Devices” https://doi.org/10.3390/ma14227081

2. “CVD diamond single crystals with NV centres: a review of material synthesis and technology for quantum sensing applications” http://dx.doi.org/10.1088/1361-6463/ab81d1

3. “High phosphorous incorporation in (100)-oriented MP CVD diamond growth” https://doi.org/10.1016/j.diamond.2023.109746

key words

Diamond; crystal growth; chemical vapor deposition; epitaxy; defects; doping; semiconductor; quantum; NV centers

Citizenship:  Open to U.S. citizens and permanent residents

Level:  Open to Postdoctoral applicants

Additional Benefits

Relocation

Awardees who reside more than 50 miles from their host laboratory and remain on tenure for at least six months are eligible for paid relocation to within the vicinity of their host laboratory.

Health insurance

A group health insurance program is available to awardees and their qualifying dependents in the United States.