Using transmission electron microscopy (TEM), our objective is to structurally characterize electronic materials and the associated extended defects such as dislocations and stacking faults. Structures of particular interest include 4H-SiC, GaN/Ga_1-x-yAl_xIn_yAlN, and Si/Si_1-xGe_x thin films. Nanoelectric materials (e.g., consisting of gold nanoclusters formed by DNA-mediated self-assembly) are also being studied. We are also analyzing silicon oxide layers in silicon, or grown directly on Si substrate. In addition, our research group is in charge of a Hitachi H-9000UHR high-resolution TEM (a top entry instrument with 0.19 nm resolution). Other accessible TEM instruments include a Philips CM30 equipped with thin-window-, energy-dispersive x-ray spectroscopy (EDXS), and a JEOL 2010 with a field emission source; Z-contrast scanning transmission electron microscopy imaging; EDXS; and electron energy loss spectroscopy analytical capabilities.

 

key words

Compound semiconductors; Dislocations; Electronic properties; Extended defects; Gallium nitride; Nanoelectronics; Silicon carbide; Silicon-based materials; Stacking faults; Transmission electron microscopy; X-ray spectra;

Citizenship:  Open to U.S. citizens and permanent residents

Level:  Open to Postdoctoral applicants