The project focuses on developing and characterizing novel SiC and GaN power electronic devices. SiC and GaN power switches have the potential of increasing power converter operation voltage to 10-20kV and increasing the switching frequency by a factor of 10. Current research focuses on characterizing and understanding defects in SiC and GaN materials, the effects that the defects in materials have on SiC and GaN devices performance and reliability, investigation of carrier transport in two-dimensional structures, affect of traps at the semiconductor-dielectric interface on mobility and charge trapping in the dielectric, and device physics or high voltage junction termination region. In addition, novel device structures are being investigated to achieve improved performance, higher operation voltage, and improved reliability.

 

key words

Defects; Electronics; Gallium nitride; GaN; Materials; Physics; SiC; Silicon carbide;

Citizenship:  Open to U.S. citizens and permanent residents

Level:  Open to Postdoctoral applicants

Additional Benefits

Relocation

Awardees who reside more than 50 miles from their host laboratory and remain on tenure for at least six months are eligible for paid relocation to within the vicinity of their host laboratory.

Health insurance

A group health insurance program is available to awardees and their qualifying dependents in the United States.