NRC Research Associate Programs
Fellowships Office
Policy and Global Affairs

Participating Agencies

RAP opportunity at Naval Research Laboratory     NRL

SiC and GaN Power Devices

Location

Naval Research Laboratory, DC, Electronics Science & Technology Division

opportunity location
64.15.25.B6832 Washington, DC 203755321

Advisers

name email phone
Robert E Stahlbush robert.stahlbush@nrl.navy.mil 202.767.3357

Description

The project focuses on developing and characterizing novel SiC and GaN power electronic devices. SiC and GaN power switches have the potential of increasing power converter operation voltage to 10-20kV and increasing the switching frequency by a factor of 10. Current research focuses on characterizing and understanding defects in SiC and GaN materials, the effects that the defects in materials have on SiC and GaN devices performance and reliability, investigation of carrier transport in two-dimensional structures, affect of traps at the semiconductor-dielectric interface on mobility and charge trapping in the dielectric, and device physics or high voltage junction termination region. In addition, novel device structures are being investigated to achieve improved performance, higher operation voltage, and improved reliability.

 

key words
Defects; Electronics; Gallium nitride; GaN; Materials; Physics; SiC; Silicon carbide;

Eligibility

Citizenship:  Open to U.S. citizens and permanent residents
Level:  Open to Postdoctoral applicants

Stipend

Base Stipend Travel Allotment Supplementation
$94,199.00 $3,000.00
Copyright © 2022. National Academy of Sciences. All rights reserved.Terms of Use and Privacy Policy