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RAP opportunity at Naval Research Laboratory     NRL

Gallium Nitride MEMS Acoustic Resonators

Location

Naval Research Laboratory, DC, Electronics Science & Technology Division

opportunity location
64.15.25.B7920 Washington, DC 203755321

Advisers

name email phone
Brian Patrick Downey brian.downey@nrl.navy.mil 202.404.4625

Description

The piezoelectric properties of the Ill-N materials system are ideal for MEMS acoustic resonators. Because of the small size of these resonators, there is potential for on-chip integration with other GaN-based devices such as high-electron-mobility transistors. We are interested in understanding how resonator design affects resonator performance at high frequencies through physics-based modeling. Extensive facilities are available in-house for materials growth and characterization, device modeling, device fabrication, and electrical testing.

 

key words
GaN; AIN; Acoustic; Resonator; Transistor; MEMS; Modeling;

Eligibility

Citizenship:  Open to U.S. citizens and permanent residents
Level:  Open to Postdoctoral applicants

Stipend

Base Stipend Travel Allotment Supplementation
$94,199.00 $3,000.00
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