The piezoelectric properties of the Ill-N materials system are ideal for MEMS acoustic resonators. Because of the small size of these resonators, there is potential for on-chip integration with other GaN-based devices such as high-electron-mobility transistors. We are interested in understanding how resonator design affects resonator performance at high frequencies through physics-based modeling. Extensive facilities are available in-house for materials growth and characterization, device modeling, device fabrication, and electrical testing.

Additional Benefits

Awardees who reside more than 50 miles from their host laboratory and remain on tenure for at least six months are eligible for paid relocation to within the vicinity of their host laboratory.

A group health insurance program is available to awardees and their qualifying dependents in the United States.